the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np110n04pdg switching n-channel power mos fet data sheet document no. d17561ej2v0ds00 (2nd edition) date published june 2006 ns cp(k) printed in japan 2005 description the np110n04pdg is n-channel mos field effect trans istor designed for high current switching applications. ordering information part number lead plating packing package NP110N04PDG-E1-AZ note np110n04pdg-e2-az note pure sn (tin) tape 800 p/reel to-263 (mp-25zp) typ. 1.5 g note see ? tape information ? features ? channel temperature 175 degree rating ? super low on-state resistance r ds(on)1 = 1.8 m max. (v gs = 10 v, i d = 55 a) r ds(on)2 = 3.2 m max. (v gs = 4.5 v, i d = 55 a) absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 110 a drain current (pulse) note1 i d(pulse) 440 a total power dissipation (t a = 25 c) p t1 1.8 w total power dissipation (t c = 25 c) p t2 288 w channel temperature t ch 175 c storage temperature t stg ? 55 to +175 c repetitive avalanche current note2 i ar 72 a repetitive avalanche energy note2 e ar 518 mj notes 1. pw 10 s, duty cycle 1% 2. t ch 150c, v dd = 20 v, r g = 25 , v gs = 20 0 v thermal resistance channel to case thermal resistance r th(ch-c) 0.52 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w (to-263) the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field.
data sheet d17561ej2v0ds 2 np110n04pdg electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a gate leakage current i gss v gs = 20 v, v ds = 0 v 100 na gate to source threshold voltage note v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 55 a 45 89 s drain to source on-state resistance note r ds(on)1 v gs = 10 v, i d = 55 a 1.4 1.8 m r ds(on)2 v gs = 4.5 v, i d = 55 a 2.1 3.2 m input capacitance c iss v ds = 25 v 14500 25700 pf output capacitance c oss v gs = 0 v 1360 2130 pf reverse transfer capacitance c rss f = 1 mhz 810 1610 pf turn-on delay time t d(on) v dd = 20 v, i d = 55 a 46 120 ns rise time t r v gs = 10 v 124 350 ns turn-off delay time t d(off) r g = 0 122 260 ns fall time t f 19 60 ns total gate charge q g v dd = 32 v 230 390 nc gate to source charge q gs v gs = 10 v 42 nc gate to drain charge q gd i d = 110 a 75 nc body diode forward voltage note v f(s-d) i f = 110 a, v gs = 0 v 0.9 1.5 v reverse recovery time t rr i f = 110 a, v gs = 0 v 55 ns reverse recovery charge q rr di/dt = 100 a/ s 72 nc note pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d17561ej2v0ds 3 np110n04pdg typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 1 ms 10 ms i d(pulse) = 440 a i d(dc) = 110 a t c = 25c single pulse dc p w = 1 0 0 s p o w e r d i s s i p a t i o n l i m i t e d r d s ( o n ) l i m i t e d ( a t v gs = 1 0 v ) v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.001 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3c/w r th(ch-c) = 0.52c/w single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d17561ej2v0ds 4 np110n04pdg drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 100 200 300 400 500 0 0.2 0.4 0.6 0.8 1 v gs = 10 v pulsed 4.5 v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 1000 123456 t a = ? 55c 25c 75c 150c 175c v ds = 10 v pulsed v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 v ds = v gs i d = 10 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 0.1 1 10 100 v ds = 10 v pu ls e d t a = ? 55 c 25 c 75 c 150 c 175 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 5 10 0.1 1 10 100 1000 10 v pulsed v gs = 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 0 5 10 15 20 pulsed i d = 110 a 55 a 22 a v gs - gate to source voltage - v
data sheet d17561ej2v0ds 5 np110n04pdg drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 0.5 1 1.5 2 2.5 3 3.5 4 -100 -50 0 50 100 150 200 v gs = 4.5 v i d = 55 a pulsed 10 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 100000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 10000 0.1 1 10 100 1000 v dd = 20 v v gs = 10 v r g = 0 t d(off) t d(on) t r t f i d - drain current - a v ds - drain to source voltage - v 0 10 20 30 40 50 0 50 100 150 200 250 0 2 4 6 8 10 i d = 110 a v ds v gs v dd = 32 v 20 v 8 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward volt age reverse recovery time vs. diode forward current i f - diode forward current - a 0.1 1 10 100 1000 00.511.5 0 v pulsed v gs = 10 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 0.1 1 10 100 1000 di/dt = 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d17561ej2v0ds 6 np110n04pdg package drawing (unit: mm) to-263 (mp-25zp) 10.0 ?.3 2.54 0.75 ?.2 0.5 9.15 ?.3 2.54 ?.25 15.25 ?.5 1.35 ?.3 2 13 4 2.5 4.45 ?.2 1.3 ?.2 0.6 ?.2 0 to 8? 1. gate 2. drain 3. source 4. fin (drain) 0.025 to 0.25 0.25 equivalent circuit source body diode gate drain remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
data sheet d17561ej2v0ds 7 np110n04pdg tape information there are two types (-e1, -e2) of tapi ng depending on the direction of the device. reel side draw-out side marking information nec pb-free plating marking 110n04 dg abbreviation of part number lot code recommended soldering conditions the np110n04pdg should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than thos e recommended below, please contact an nec electronics sales representative. for technical in formation, see the following website. semiconductor device mount manual (http ://www.necel.com/pkg/en/mount/index.html) soldering method soldering conditions recommended condition symbol infrared reflow maximum temperature (pack age's surface temperature): 260c or below time at maximum temperature: 10 seconds or less time of temperature higher than 220c: 60 seconds or less preheating time at 160 to 180c: 60 to 120 seconds maximum number of reflow processes: 3 times maximum chlorine content of rosin flux (percentage mass): 0.2% or less ir60-00-3 partial heating maximum temperature (pin temperature): 350c or below time (per side of the device): 3 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less p350 caution do not use different soldering methods together (except for partial heating).
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